| PART |
Description |
Maker |
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor
http://
|
| M368L3313CT1 |
32Mx64 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect
|
Samsung Electronic
|
| HYMD132G725BL4-H HYMD132G725BL4-K HYMD132G725BL4-L |
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
|
DB Lectro, Inc.
|
| HDD64M72D18RW-13A HDD64M72D18RPW HDD64M72D18RWP-10 |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块512Mbyte4Mx72bit），2Mx8BanksK的参考依据。，184Pin与锁相环内存
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块512Mbyte64Mx72bit），2Mx8BanksK的参考依据。，184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| M383L3223CT1 |
M383L3223CT1 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
| M312L2920MT0 |
M312L2920MT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
| M368L1713CT1 |
16Mx64 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M368L1714DT1 |
16Mx64 DDR SDRAM 184pin DIMM based on 8Mx16 Data Sheet
|
Samsung Electronic
|
| M381L3223CTL |
32Mx72 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| M368L3313BT1 |
32M x 64 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
